Showerhead shroud

ABSTRACT

A processing chamber includes an upper surface and a showerhead arranged to supply gases through the upper surface into the processing chamber. At least a portion of the showerhead extends above the upper surface of the processing chamber. A shroud enclosure is arranged on the upper surface of the processing chamber. The shroud enclosure is arranged around the portion of the showerhead extending above the upper surface of the processing chamber and is configured to isolate radio frequency interference generated by the showerhead.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application claims the benefit of U.S. Provisional Application No.62/825,344, filed on Mar. 28, 2019. The entire disclosure of theapplication referenced above is incorporated herein by reference.

FIELD

The present disclosure relates to radio frequency (RF) interferenceassociated with a showerhead in a substrate processing system.

BACKGROUND

The background description provided here is for the purpose of generallypresenting the context of the disclosure. Work of the presently namedinventors, to the extent it is described in this background section, aswell as aspects of the description that may not otherwise qualify asprior art at the time of filing, are neither expressly nor impliedlyadmitted as prior art against the present disclosure.

Substrate processing systems are used to perform treatments such asdeposition and etching of film on substrates such as semiconductorwafers. For example, deposition may be performed to deposit conductivefilm, dielectric film, or other types of film using chemical vapordeposition (CVD), plasma enhanced CVD (PECVD), atomic layer deposition(ALD), and/or other deposition processes. During deposition, thesubstrate is arranged on a substrate support and one or more precursorgases may be supplied to a processing chamber during one or more processsteps. In a PECVD process, plasma is used to activate chemical reactionswithin the processing chamber during deposition.

SUMMARY

A processing chamber includes an upper surface and a showerhead arrangedto supply gases through the upper surface into the processing chamber.At least a portion of the showerhead extends above the upper surface ofthe processing chamber. A shroud enclosure is arranged on the uppersurface of the processing chamber. The shroud enclosure is arrangedaround the portion of the showerhead extending above the upper surfaceof the processing chamber and is configured to isolate radio frequencyinterference generated by the showerhead.

In other features, the shroud enclosure includes a plurality of sectionseach corresponding to portions of one or more sides of the shroudenclosure. The plurality of sections includes a bottom section includingan opening arranged to receive the portion of the showerhead extendingabove the upper surface of the processing chamber and lower flangeportions extending upward from outer edges of the bottom section. Theplurality of sections includes one or more side sections arranged on thebottom section within a perimeter defined by the lower flange portions.The plurality of sections includes a first top section and a second topsection arranged on upper edges of the side sections. The first topsection and the second top section include upper flange sectionsextending downward from outer edges of the first top section and thesecond top section and the upper flange sections overlap the upper edgesof the side sections.

In other features, the shroud enclosure includes a plurality oftensioning rods arranged in respective corners of the shroud enclosurewithin the perimeter defined by the lower flange portions. The pluralityof tensioning rods is arranged on posts extending upward from the bottomsection. A plurality of knobs is arranged in upper ends of thetensioning rods and the knobs are configured to bias the first topsection and the second top section downward. A radio frequency filtermodule is arranged adjacent to the shroud enclosure. The radio frequencyfilter module and the shroud enclosure are arranged on the upper surfacewithin an outer perimeter of the processing chamber. The substrateprocessing system comprises a plurality of the processing chambers andeach of the processing chambers includes a respective one of the shroudenclosures.

A shroud enclosure includes a bottom section including an openingarranged to receive a portion of a showerhead extending above an uppersurface of a processing chamber and lower flange portions extendingupward from outer edges of the bottom section, one or more side sectionsarranged on the bottom section within a perimeter defined by the lowerflange portions, and a first top section and a second top sectionarranged on upper edges of the side sections. The bottom section, theside sections, the first top section, and the second top section areseparable from each other and, when assembled, are configured to isolateradio frequency interference generated by the showerhead.

In other features, the first top section and the second top sectioninclude upper flange sections extending downward from outer edges of thefirst top section and the second top section and the upper flangesections overlap the upper edges of the side sections. The shroudenclosure includes a plurality of tensioning rods arranged in respectivecorners of the shroud enclosure within the perimeter defined by thelower flange portions. The plurality of tensioning rods is arranged onposts extending upward from the bottom section. A plurality of knobs isarranged in upper ends of the tensioning rods and the knobs areconfigured to bias the first top section and the second top sectiondownward.

In other features, an assembly includes the shroud enclosure and a radiofrequency filter module arranged adjacent to the shroud enclosure. Theradio frequency filter module and the shroud enclosure are configured tobe arranged on the upper surface within an outer perimeter of theprocessing chamber. The substrate processing system further includes aplurality of processing chambers and each of the plurality of processingchambers includes a respective one of the shroud enclosures.

Further areas of applicability of the present disclosure will becomeapparent from the detailed description, the claims and the drawings. Thedetailed description and specific examples are intended for purposes ofillustration only and are not intended to limit the scope of thedisclosure.

BRIEF DESCRIPTION OF THE DRAWINGS

The present disclosure will become more fully understood from thedetailed description and the accompanying drawings, wherein:

FIG. 1 is a functional block diagram of an example substrate processingsystem according to the present disclosure;

FIGS. 2A and 2B are an example substrate processing system and substrateprocessing chamber including a shroud enclosure according to the presentdisclosure;

FIGS. 3A and 3B are an example shroud enclosure according to the presentdisclosure; and

FIG. 4 is an example assembly of a shroud enclosure and RF filter moduleaccording to the present disclosure.

In the drawings, reference numbers may be reused to identify similarand/or identical elements.

DETAILED DESCRIPTION

Substrate processing systems may include a gas distribution device suchas a showerhead. The showerhead is configured to introduce anddistributes process gases (e.g., precursor gases, purge gases, etc.).For example, the showerhead may be arranged above a substrate support ina processing chamber and distribute process gases to perform treatmentssuch as deposition and etching on a substrate. In some examples, theshowerhead may function as an upper electrode for generating radiofrequency (RF) plasma within the processing chamber.

The showerhead may include a base portion (e.g., corresponding to afaceplate and plenum, upper electrode, etc.) that is arranged in anupper surface of and at least partially within the processing chamber. Aportion of the showerhead (e.g., a stem portion and/or the base portion)may extend through the upper surface of the processing chamber into avolume above the processing chamber. Systems and methods according tothe present disclosure provide a shroud enclosure (e.g., an RF shroud)around the portion of the showerhead extending above the upper surfaceof the processing chamber. For example, the shroud enclosure isconfigured to function as a Faraday cage. The shroud enclosure isconfigured to contain and isolate RF interference generated by theshowerhead and related components. Accordingly, RF noise caused by theshowerhead and experienced by other components (e.g., components ofother processing chambers/stations within the substrate processingsystem) is mitigated.

In some examples, an RF filter module (e.g., an RF filter box) isarranged above the processing chamber (e.g., on an upper surface of theprocessing chamber) adjacent to the shroud enclosure. The RF filtermodule is configured to filter RF noise from electrical signalscommunicated to and from components within the shroud enclosure.

Referring now to FIG. 1, an example of a substrate processing system 100according to the principles of the present disclosure is shown. Whilethe foregoing example relates to PECVD systems, other plasma-basedsubstrate processing chambers may be used. The substrate processingsystem 100 includes a processing chamber 104 that encloses othercomponents of the substrate processing system 100. The substrateprocessing system 100 includes an upper electrode 108 and a substratesupport such as a pedestal 112 including a lower electrode 116. Asubstrate 120 is arranged on the pedestal 112 between the upperelectrode 108 and the lower electrode 116.

For example only, the upper electrode 108 may include a showerhead 124that introduces and distributes process gases. Alternately, the upperelectrode 108 may include a conducting plate and the process gases maybe introduced in another manner. The lower electrode 116 may be arrangedin a non-conductive pedestal. Alternately, the pedestal 112 may includean electrostatic chuck that includes a conductive plate that acts as thelower electrode 116.

A radio frequency (RF) generating system 126 generates and outputs an RFvoltage to one of the upper electrode 108 and the lower electrode 116when plasma is used. The other one of the upper electrode 108 and thelower electrode 116 may be DC grounded, AC grounded or floating. Asshown, the RF voltage is output to the upper electrode 108 and the lowerelectrode 116 is grounded. For example only, the RF generating system126 may include one or more RF voltage generators 128 (e.g., acapacitively-coupled plasma RF power generator, a bias RF powergenerator, and/or other RF power generator) that generate RF voltages,which are fed by one or more matching and distribution networks 130 tothe upper electrode 108 (as shown) and/or the lower electrode 116.

An example gas delivery system 140 includes one or more gas sources144-1, 144-2, . . . , and 144-N (collectively gas sources 144), where Nis an integer greater than zero. The gas sources 144 supply one or moregases (e.g., precursors, inert gases, etc.) and mixtures thereof.Vaporized precursor may also be used. At least one of the gas sources144 may contain gases used in the pre-treatment process of the presentdisclosure (e.g., NH₃, N₂, etc.). The gas sources 144 are connected byvalves 148-1, 148-2, . . . , and 148-N (collectively valves 148) andmass flow controllers 152-1, 152-2, . . . , and 152-N (collectively massflow controllers 152) to a manifold 154. An output of the manifold 154is fed to the processing chamber 104. For example only, the output ofthe manifold 154 is fed to the showerhead 124. In some examples, anoptional ozone generator 156 may be provided between the mass flowcontrollers 152 and the manifold 154. In some examples, the substrateprocessing system 100 may include a liquid precursor delivery system158. The liquid precursor delivery system 158 may be incorporated withinthe gas delivery system 140 as shown or may be external to the gasdelivery system 140. The liquid precursor delivery system 158 isconfigured to provide precursors that are liquid and/or solid at roomtemperature via a bubbler, direct liquid injection, vapor draw, etc.

A heater 160 may be connected to a heater coil (not shown) arranged inthe pedestal 112 to heat the pedestal 112. The heater 160 may be used tocontrol a temperature of the pedestal 112 and the substrate 120. A valve164 and pump 168 may be used to evacuate reactants from the processingchamber 104. A controller 172 may be used to control various componentsof the substrate processing system 100.

For example only, the controller 172 may be used to control flow ofprocess, carrier and precursor gases, striking and extinguishing plasma,removal of reactants, monitoring of chamber parameters, etc.

The showerhead 124 according to the present disclosure may include abase portion 174 and a stem portion 176. As shown, the stem portion 176passes through an upper surface 178 (e.g., through in opening in theupper surface 178) of the processing chamber 104 and the base portion174 is arranged within the processing chamber 104 adjacent to the uppersurface 178. In other examples, the base portion 174 may be arranged atleast partially above the upper surface 178 and extend into theprocessing chamber 104. In still other examples, the base portion 174may be arranged above the processing chamber 104 and a faceplate 180 ofthe showerhead 124 may be flush (i.e., coplanar) with the upper surface179. In each example, at least a portion of the showerhead 124 (e.g.,portions of the stem portion 176 and/or the base portion 174) isarranged above the upper surface 178 of the processing chamber 104.

A shroud enclosure (e.g., an RF shroud) 182 is arranged around theportions of the showerhead 124 extending above the upper surface 178 ofthe processing chamber 104 as described below in more detail. Forexample, the shroud enclosure 182 is configured to function as a Faradaycage to contain and isolate RF interference generated by the showerhead124. In some examples, an RF filter module (e.g., an RF filter box) 184is arranged above the processing chamber 104 adjacent to the shroudenclosure 182 to filter RF noise from electrical signals communicated toand from components within the shroud enclosure 182.

Referring now to FIGS. 2A and 2B, an example substrate processing system200 may include one or more processing chambers 204 corresponding torespective stations 208-1, 208-2, 208-3, and 208-4, referred tocollectively as stations 208. As shown, the substrate processing system200 includes four of the stations 208 but in other examples fewer ormore of the stations 208 may be included. Each of the stations 208 maybe configured to perform the same or different processes performed inothers of the stations 208. In each of the stations 208, thecorresponding processing chamber 204 includes a shroud enclosure 212 andRF filter module 216 according to the present disclosure arranged on arespective upper surface 220 of the processing chamber 204. The shroudenclosure 212 and the RF filter module 216 may be arranged in atmosphereabove the processing chamber 204. Further, each shroud enclosure 212 andRF filter module 216 pair may be arranged within an outer perimeter of arespective one of the processing chambers 204. In other words, afootprint of the shroud enclosure 212 may be smaller than a footprint ofthe processing chamber 204. Relative sizes (e.g., heights, widths, etc.)of the shroud enclosure 212 and the RF filter module 216 are shown forexample only and may vary.

Accordingly, each of the shroud enclosures 212 is arranged aroundcomponents of a showerhead 224 (e.g., including a base portion 228 andstem portion 232) of a respective one of the processing chambers 204.Each of the shroud enclosures 212 contains RF interference generated bythe respective showerhead 224 and isolates the RF interference fromcomponents of others of the processing chambers 204. In other words, thesubstrate processing system 200 does not only include a single RF shroudenclosure surrounding all of the processing chambers 204 or stations208, or multiple large RF shroud enclosures each enclosing an entire oneof the processing chambers 204. Rather, each processing chamber 204 andshowerhead 224 has a respective shroud enclosure 212 arranged to containand isolate the RF interference generated by that showerhead 224 andassociated components.

The RF filter module 216 is adjacent to and may be optionally connectedto the shroud enclosure 212. The RF filter module 216 is configured tofilter RF noise from electrical signals (e.g., both AC and DC signalscorresponding to RF power, thermocouples, heater control, etc.) 236communicated to and from components within the shroud enclosure 212. Anexample RF filter configured to filter RF noise from electrical signalsin a substrate processing system is described in more detail in U.S.Patent Publication No. 2017/0125200, which is hereby incorporated hereinby reference in its entirety.

Referring now to FIGS. 3A and 3B, an example shroud enclosure 300 andassembly are shown. The shroud enclosure 300 is configured for toollessassembly and installation. For example, the shroud enclosure 300includes a plurality of separable sections 304 (individually, sections304-1, 304-2, 304-3, 304-4, 304-5, and 304-6) that can be manuallyassembled around an upper portion of the showerhead 224 above theprocessing chamber 204. For example only, each of the sections 304comprises sheet metal, such as aluminum. As shown, the shroud enclosure300 is a generally cubical or rectangular box including a top side308-1, a bottom side 308-2, and four vertical 308-3, 308-4, 308-5, and308-6, referred to collectively as sides 308. Further, all of thesections 304 do not respectively correspond directly to one of the sides308. Rather, each of the sections 304 may comprise one of the sides 308,only a portion of one of the sides 308, and/or portions of multiple onesof the sides 308.

For example, sections 304-1 and 304-2 (e.g., top sections) may form thetop side 308-1 and a section 304-3 (e.g., a bottom section) forms thebottom side 308-2 and portions of the sides 308-3 and 308-6. A section304-4 forms the side 308-4 and portions of the sides 308-3 and 308-5.Section 304-5 forms portions of the sides 308-5 and 308-6 and section304-6 forms portions of the sides 308-6 and 308-3. Although six of thesections 304 are shown, the shroud enclosure 300 may include fewer ormore of the sections 304 in other examples.

An example assembly of the shroud enclosure 300 is shown in FIG. 3B. Forexample, the section 304-3 may include a central opening 312 configuredto receive the stem portion 232 of the showerhead 224 and/or other upperportions of the showerhead 224 arranged to extend through the uppersurface 220 of the processing chamber 204.

In some examples, the section 304-3 may be positioned on one or moreposts 316 extending upward from the upper surface 220. The sections304-4, 304-5, and 304-6 may then be positioned on the section 304-3. Forexample, the sections 304-4, 304-5, and 304-6 are arranged within anouter perimeter of the section 304-3 as defined by flange portions 320(e.g., lower retaining flange portions) extending upward from each edgeof the section 304-3. In this example, the flange portions 320 overlaprespective ones of the sections 304-4, 304-5, and 304-6. Further, theposts 316 extend upward within respective corners defined by thesections 304-4, 304-5, and 304-6.

Tensioning rods 324 are arranged on the posts 316 and within therespective corners defined by the sections 304-4, 304-5, and 304-6. Insome examples, the posts 316 and lower ends of the tensioning rods 324are threaded and the tensioning rods 324 are screwed onto the posts 316.With the tensioning rods 324 installed, lower edges of the sections304-4, 304-5, and 304-6 are retained on the section 304-3 between theflange portions 320 and the tensioning rods 324.

The sections 304-1 and 304-2 (each corresponding to a half, for example,of the top side 308-1) are arranged on upper edges of the sections304-4, 304-5, and 304-6. For example, the sections 304-1 and 304-2include flange portions (e.g., upper retaining flange portions) 328extending downward from each edge of the sections 304-1 and 304-2. Inthis example, the flange portions 328 overlap respective ones of thesections 304-4, 304-5, and 304-6. Upper edges of the sections 304-4,304-5, and 304-6 are retained between the flange portions 328 and thetensioning rods 324. The sections 304-1 and 304-2 may each include arespective cutout 332 that together define a central opening 336 in thetop side 308-1. For example, the opening 336 may be arranged to receivea conduit for providing one or more gases (e.g., cleaning or purgegases) to the stem portion 232 of the showerhead 224.

A plurality of knobs 340 are arranged to secure the assembly of theshroud enclosure 300. For example, the shroud enclosure 300 includesfour of the knobs 340 aligned with the tensioning rods 324 at respectivecorners of the top side 308-1. The knobs 340 each include respectiveposts 344 configured to be inserted within upper ends of the tensioningrods 324. For example, the posts 344 and the upper ends of thetensioning rods 324 are threaded and the knobs 340 are screwed into thetensioning rods 324. In this manner, the sections 304-1 and 304-2 aretightened onto the shroud enclosure 300 and the sections 304-4, 304-5,and 304-6 are captured and retained within the sections 304-1, 304-2,and 304-3. In some examples, the top side 308-1 may include one or morelatches or clasps 348 arranged to connect the sections 304-1 and 304-2together. Accordingly, the shroud enclosure 300 may be assembled aroundand/or removed from the portions of the showerhead 224 above theprocessing chamber 204.

In some examples, one or more of the sides 308 (e.g., the top side 308-1and the sides 308-4, 308-5, and 308-6) may be perforated with aplurality of holes 352 to configure the shroud enclosure 300 to functionas a Faraday cage. The side 308-3 may correspond to the one of the sides308 arranged adjacent to (and/or connected to) the RF filter module 216.Accordingly, the side 308-3 may not include the plurality of holes 352.Similarly, the bottom side 308-2 adjacent to the upper surface 220 maynot include the plurality of holes 352.

The sections 304 may include additional features associated withoperation of the showerhead 224 and the processing chamber 204. Forexample, the sections 304 may include various openings arranged toreceive components for providing gases, electrical signals, etc. to theshowerhead 224. For example only, portions of the sections 304-4 and304-6 corresponding to the side 308-3 may define an opening 356 arrangedto receive a conduit for providing process gases to the showerhead 224.The flange portion 320 corresponding to the side 308-3 adjacent to theRF filter module 216 may include one or more openings 360 arranged toreceive wiring for providing electrical signals between the RF filtermodule 216 and the showerhead 224 including, but not limited to, RFsignals, heater power signals, thermocouple signals, etc. The section304-5 may include an opening 364 arranged to receive a conduit forproviding cooling gas to the showerhead 224.

FIG. 4 shows one example arrangement of an assembly 400 including ashroud enclosure 404 and RF filter module 408. As shown, The RF filtermodule 408 is directly adjacent to and may be optionally connected tothe shroud enclosure 404. The RF filter module 408 is configured tofilter (i.e., remove radiation and conductive noise from) electricalsignals communicated into and out of the shroud enclosure 404.

The foregoing description is merely illustrative in nature and is in noway intended to limit the disclosure, its application, or uses. Thebroad teachings of the disclosure can be implemented in a variety offorms. Therefore, while this disclosure includes particular examples,the true scope of the disclosure should not be so limited since othermodifications will become apparent upon a study of the drawings, thespecification, and the following claims. It should be understood thatone or more steps within a method may be executed in different order (orconcurrently) without altering the principles of the present disclosure.Further, although each of the embodiments is described above as havingcertain features, any one or more of those features described withrespect to any embodiment of the disclosure can be implemented in and/orcombined with features of any of the other embodiments, even if thatcombination is not explicitly described. In other words, the describedembodiments are not mutually exclusive, and permutations of one or moreembodiments with one another remain within the scope of this disclosure.

Spatial and functional relationships between elements (for example,between modules, circuit elements, semiconductor layers, etc.) aredescribed using various terms, including “connected,” “engaged,”“coupled,” “adjacent,” “next to,” “on top of,” “above,” “below,” and“disposed.” Unless explicitly described as being “direct,” when arelationship between first and second elements is described in the abovedisclosure, that relationship can be a direct relationship where noother intervening elements are present between the first and secondelements, but can also be an indirect relationship where one or moreintervening elements are present (either spatially or functionally)between the first and second elements. As used herein, the phrase atleast one of A, B, and C should be construed to mean a logical (A OR BOR C), using a non-exclusive logical OR, and should not be construed tomean “at least one of A, at least one of B, and at least one of C.”

In some implementations, a controller is part of a system, which may bepart of the above-described examples. Such systems can comprisesemiconductor processing equipment, including a processing tool ortools, chamber or chambers, a platform or platforms for processing,and/or specific processing components (a wafer pedestal, a gas flowsystem, etc.). These systems may be integrated with electronics forcontrolling their operation before, during, and after processing of asemiconductor wafer or substrate. The electronics may be referred to asthe “controller,” which may control various components or subparts ofthe system or systems. The controller, depending on the processingrequirements and/or the type of system, may be programmed to control anyof the processes disclosed herein, including the delivery of processinggases, temperature settings (e.g., heating and/or cooling), pressuresettings, vacuum settings, power settings, radio frequency (RF)generator settings, RF matching circuit settings, frequency settings,flow rate settings, fluid delivery settings, positional and operationsettings, wafer transfers into and out of a tool and other transfertools and/or load locks connected to or interfaced with a specificsystem.

Broadly speaking, the controller may be defined as electronics havingvarious integrated circuits, logic, memory, and/or software that receiveinstructions, issue instructions, control operation, enable cleaningoperations, enable endpoint measurements, and the like. The integratedcircuits may include chips in the form of firmware that store programinstructions, digital signal processors (DSPs), chips defined asapplication specific integrated circuits (ASICs), and/or one or moremicroprocessors, or microcontrollers that execute program instructions(e.g., software). Program instructions may be instructions communicatedto the controller in the form of various individual settings (or programfiles), defining operational parameters for carrying out a particularprocess on or for a semiconductor wafer or to a system. The operationalparameters may, in some embodiments, be part of a recipe defined byprocess engineers to accomplish one or more processing steps during thefabrication of one or more layers, materials, metals, oxides, silicon,silicon dioxide, surfaces, circuits, and/or dies of a wafer.

The controller, in some implementations, may be a part of or coupled toa computer that is integrated with the system, coupled to the system,otherwise networked to the system, or a combination thereof. Forexample, the controller may be in the “cloud” or all or a part of a fabhost computer system, which can allow for remote access of the waferprocessing. The computer may enable remote access to the system tomonitor current progress of fabrication operations, examine a history ofpast fabrication operations, examine trends or performance metrics froma plurality of fabrication operations, to change parameters of currentprocessing, to set processing steps to follow a current processing, orto start a new process. In some examples, a remote computer (e.g. aserver) can provide process recipes to a system over a network, whichmay include a local network or the Internet. The remote computer mayinclude a user interface that enables entry or programming of parametersand/or settings, which are then communicated to the system from theremote computer. In some examples, the controller receives instructionsin the form of data, which specify parameters for each of the processingsteps to be performed during one or more operations. It should beunderstood that the parameters may be specific to the type of process tobe performed and the type of tool that the controller is configured tointerface with or control. Thus as described above, the controller maybe distributed, such as by comprising one or more discrete controllersthat are networked together and working towards a common purpose, suchas the processes and controls described herein. An example of adistributed controller for such purposes would be one or more integratedcircuits on a chamber in communication with one or more integratedcircuits located remotely (such as at the platform level or as part of aremote computer) that combine to control a process on the chamber.

Without limitation, example systems may include a plasma etch chamber ormodule, a deposition chamber or module, a spin-rinse chamber or module,a metal plating chamber or module, a clean chamber or module, a beveledge etch chamber or module, a physical vapor deposition (PVD) chamberor module, a chemical vapor deposition (CVD) chamber or module, anatomic layer deposition (ALD) chamber or module, an atomic layer etch(ALE) chamber or module, an ion implantation chamber or module, a trackchamber or module, and any other semiconductor processing systems thatmay be associated or used in the fabrication and/or manufacturing ofsemiconductor wafers.

As noted above, depending on the process step or steps to be performedby the tool, the controller might communicate with one or more of othertool circuits or modules, other tool components, cluster tools, othertool interfaces, adjacent tools, neighboring tools, tools locatedthroughout a factory, a main computer, another controller, or tools usedin material transport that bring containers of wafers to and from toollocations and/or load ports in a semiconductor manufacturing factory.

What is claimed is:
 1. A processing chamber, comprising: an uppersurface; a showerhead arranged to supply gases through the upper surfaceinto the processing chamber, wherein at least a portion of theshowerhead extends above the upper surface of the processing chamber;and a shroud enclosure arranged on the upper surface of the processingchamber, wherein the shroud enclosure is arranged around the portion ofthe showerhead extending above the upper surface of the processingchamber, and wherein the shroud enclosure is configured to isolate radiofrequency interference generated by the showerhead.
 2. The processingchamber of claim 1, wherein the shroud enclosure includes a plurality ofsections each corresponding to portions of one or more sides of theshroud enclosure.
 3. The processing chamber of claim 2, wherein theplurality of sections includes a bottom section including an openingarranged to receive the portion of the showerhead extending above theupper surface of the processing chamber and lower flange portionsextending upward from outer edges of the bottom section.
 4. Theprocessing chamber of claim 3, wherein the plurality of sectionsincludes one or more side sections arranged on the bottom section withina perimeter defined by the lower flange portions.
 5. The processingchamber of claim 4, wherein the plurality of sections includes a firsttop section and a second top section arranged on upper edges of the sidesections.
 6. The processing chamber of claim 5, wherein the first topsection and the second top section include upper flange sectionsextending downward from outer edges of the first top section and thesecond top section, wherein the upper flange sections overlap the upperedges of the side sections.
 7. The processing chamber of claim 5,wherein the shroud enclosure includes a plurality of tensioning rodsarranged in respective corners of the shroud enclosure within theperimeter defined by the lower flange portions.
 8. The processingchamber of claim 7, wherein the plurality of tensioning rods is arrangedon posts extending upward from the bottom section.
 9. The processingchamber of claim 7, further comprising a plurality of knobs arranged inupper ends of the tensioning rods, wherein the knobs are configured tobias the first top section and the second top section downward.
 10. Theprocessing chamber of claim 1, further comprising a radio frequencyfilter module arranged adjacent to the shroud enclosure.
 11. Theprocessing chamber of claim 10, wherein the radio frequency filtermodule and the shroud enclosure are arranged on the upper surface withinan outer perimeter of the processing chamber.
 12. A substrate processingsystem, wherein the substrate processing system comprises a plurality ofthe processing chambers of claim 1, and wherein each of the processingchambers includes a respective one of the shroud enclosures.
 13. Ashroud enclosure, comprising: a bottom section including an openingarranged to receive a portion of a showerhead extending above an uppersurface of a processing chamber and lower flange portions extendingupward from outer edges of the bottom section; one or more side sectionsarranged on the bottom section within a perimeter defined by the lowerflange portions; and a first top section and a second top sectionarranged on upper edges of the side sections, wherein the bottomsection, the side sections, the first top section, and the second topsection are separable from each other and, when assembled, areconfigured to isolate radio frequency interference generated by theshowerhead.
 14. The shroud enclosure of claim 13, wherein the first topsection and the second top section include upper flange sectionsextending downward from outer edges of the first top section and thesecond top section, wherein the upper flange sections overlap the upperedges of the side sections.
 15. The shroud enclosure of claim 13,wherein the shroud enclosure includes a plurality of tensioning rodsarranged in respective corners of the shroud enclosure within theperimeter defined by the lower flange portions.
 16. The shroud enclosureof claim 15, wherein the plurality of tensioning rods is arranged onposts extending upward from the bottom section.
 17. The shroud enclosureof claim 15, further comprising a plurality of knobs arranged in upperends of the tensioning rods, wherein the knobs are configured to biasthe first top section and the second top section downward.
 18. Anassembly comprising the shroud enclosure of claim 13 and furthercomprising a radio frequency filter module arranged adjacent to theshroud enclosure.
 19. The assembly of claim 18, wherein the radiofrequency filter module and the shroud enclosure are configured to bearranged on the upper surface within an outer perimeter of theprocessing chamber.
 20. A substrate processing system, wherein thesubstrate processing system comprises a plurality of processingchambers, and wherein each of the plurality of processing chambersincludes a respective one of the shroud enclosures of claim 13.